Teaching plan for the course unit



Close imatge de maquetació




General information


Course unit name: Nanoelectronics

Course unit code: 571426

Academic year: 2021-2022

Coordinator: Blas Garrido Fernandez

Department: Department of Electronic and Biomedical Engineering

Credits: 2,5

Single program: S



Estimated learning time

Total number of hours 62.5


Face-to-face and/or online activities



-  Lecture





-  Lecture with practical component




Supervised project


Independent learning




Competences to be gained during study


Basic competences

— Capacity to apply the acquired knowledge to problem-solving in new or relatively unknown environments within broader (or multidisciplinary) contexts related to the field of study.

— Capacity to integrate knowledge and tackle the complexity of formulating judgments based on incomplete or limited information, taking due consideration of the social and ethical responsibilities involved in applying knowledge and making judgments.

— Capacity to communicate conclusions, judgments and the grounds on which they have been reached to specialist and non-specialist audiences in a clear and unambiguous manner.


General competences

— Capacity to identify the scientific and industrial landscape in the immediate, national and international environment in the field of nanoscience and nanotechnology.

— Capacity to work independently, manage time and projects effectively, and acquire specific knowledge in order to gain entrance to doctoral programmes in nanoscience and nanotechnology.


Specific competences

— Capacity to recognize technological advances and current problems in the domain of nanotechnology as an interdisciplinary science.

— Ability to perform research and development tasks in relation to new nanostructured materials and nanodevices with innovative functionalities and potential applications in biotechnology, pharmacotherapy, information processing and storage, and improved energy use.

— Abilities and skills in the field of nanotechnology to establish future areas of research, development and production in companies associated with the field.





Learning objectives


Referring to knowledge

— Give an in-depth overview of the evolution of microelectronics until well into the 21st century. Introduce students to a reminder of advanced CMOS technology and the physics of the MOSFET transistor. Investigate deep submicron MOSFETs and describe physical and technological limits of miniaturization.

— Introduce students to short channel effects and quantum transport to understand the behaviour of modern devices. Investigate new materials such as High K-Low K and metal and silicides as substitutes of standard materials.

— Acquire a spirit of discovery and pushing the limits of technology and discuss solutions to keep up with miniaturization trend beyond Moore’s law. Describe advanced bulk and SOI processes of IBM and INTEL and nanolithography limitation of deep and extreme UV.

— Acquire an understanding of new physical processes and devices related with the nanoscale, such as balistic transport, Coulomb blockade, resonant tunnelling, nanomemories and single electron devices.

— Improve strategies in searching information, writing scientific reports and delivering oral presentation through a written assignment.

— Get to know the most advanced characterization tools in nanoelectronics at the Department of Electronics of the University of Barcelona, where students will design an experiment to measure nanoelectronic properties of a particular nanodevice.



Teaching blocks


1. Advanced CMOS technology

*  Description of the basic technological steps to fabricate a standard bulk MOSFET
— Semiconductor materials: substrate, doping, annealing
— Dielectric materials: oxidation and deposition
— Metal materials: poly silicon and metallization
— Standard lithography tools and technology nodes
— Fabrication sequence of advanced bulk CMOS

2. MOS field effect transistor physics

*  MOSFET physics plus amplification and commutation in elemental circuits
— MOS capacitor and MIS gate stacks
— MOSFET transistor, regimes, threshold voltage, I-V curves, figures of merit
— Circuits with MOSFETs: small signal, gain, polarization, amplifier, CMOS inverter

3. Silicon MOSFETs: novel materials and alternative concepts

*  Evolution of MOSFETs until 22 nm node
— Scaling laws, physical and technological limitations for miniaturization
— Short channel effects, tunnel leakage currents, polysilicon depletion, ultrashallow junctions and ballistic transport
— Alternative high-K dielectric materials as a substitution of silicon oxide
— Silicides and metal gates beyond the 90 nm node
— Propagation delay bottleneck and Low-K materials for intermetal dielectrics
— Comparison between bulk silicon and SOI MOSFETs
— Advanced concepts: SON, double gate, ultrathin body, FINFETs
— Introduction to optical interconnects

4. Advanced nanolithography tools

*  Design, fabrication and replication of nanoelectronic devices
— Deep UV lithography, layout, reticle and mask fabrication
— Extreme UV Lithography
— Electron Beam Lithography
— Other tools: nanoimprint and AFM

5. Transport in low dimensional systems

*  Introduction to mesoscopic physics and quantum transport
— Low-dimensional semiconductors: wells, wires and dots
— Quantum conductance and transmittance
— Electron Tunneling
— Ballistic transport
— Coulomb blockage
— Transport in nanostructured materials

6. Nanoelectronic and single electron devices

*  Structure and physical properties of basic nanoelectronic devices
— Resonant tunneling devices (RTDs)
— Nanomemory devices based on quantum dots
— Single electron devices
— Single photon devices

7. Characterization of nanoelectronic devices

*  Electrical characterization at the nanoscale
— Layout and cross-section of the device
— Pads and needles for contacts: the probe station
— Semiconductor parameter analyzers
— Low-level measurement techniques
— Laboratory experiment



Official assessment of learning outcomes


Continuous assessment

Assessment consists in an exam on basic concepts (50% of the final grade) and a project summarizing the state of the art and basic literature of a specific topic agreed with the lecturer. The project includes the preparation of a Power Point presentation (50% of the final grade). Students must attend at least 80% of the lectures, except for documented and justified special cases.

Repeat assessment

Students are entitled to repeat assessment only when have completed all the activities in the course.


Examination-based assessment

Students who wish to opt for single assessment must inform the coordinator of the subject and officially notify the coordinator of the master’s degree within the established deadlines. Mandatory activities must also be completed to be entitled to take the final exam.

Repeat assessment

Students who follow this modality are also entitled to repeat assessment only when have completed all the activities in the course.